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arXiv · 1704.01853

Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces

Luca Esposito·Sergio Bietti·Alexey Fedorov·Richard Noetzel·Stefano Sanguinetti
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Abstract

We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier as leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientations and we identify the growth conditions that drive the typical three-dimensional growth of Ga(Al)As(111)A towards atomically flat surface. GaAs/AlGaAs quantum wells realized on optimized surface (<0.2 nm roughness) show a record low emission linewidth of 4.5 meV.

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Luca Esposito, Sergio Bietti, Alexey Fedorov, Richard Noetzel, Stefano Sanguinetti. 2017-04-06. Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces. https://doi.org/10.1103/physrevmaterials.1.024602

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