Pinning effects on flux flow instability in epitaxial Nb thin films

Abstract

The flux flow properties of epitaxial niobium films with different pinning strengths are investigated by dc electrical resistance measurements and mapped to results derived within the framework of a theoretical model. Investigated are the cases of weak random pinning in as-grown films, strong random pinning in Ga ion-irradiated films, and strong periodic pinning induced by a nanogroove array milled by focused ion beam. The generic feature of the current-voltage curves of the films consists in instability jumps to the normal state at some instability current density $j^\ast$ as the vortex lattice reaches its critical velocity $v^\ast$. While $v^\ast(B)$ monotonically decreases for as-grown films, the irradiated films exhibit a non-monotonic dependence $v^\ast(B)$ attaining a maximum in the low-field range. In the case of nanopatterned films, this broad maximum is accompanied by a much sharper maximum in both, $v^\ast(B)$ and $j^\ast(B)$, which we attribute to the commensurability effect when the spacing between the vortex rows coincides with the location of the grooves. We argue that the observed behavior of $v^\ast(B)$ can be explained by the pinning effect on the vortex flow instability and support our claims by fitting the experimental data to theoretical expressions derived within a model accounting for the field dependence of the depinning current density.