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arXiv · 1705.04475

Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybrid structures

J. P. B. Silva·C. Almeida Marques·J. Agostinho Moreira·O. Conde
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Abstract

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au and Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au structures and the high quality of the SiO$_{x}$/MoSe$_{2}$ interface in the Al/Si/SiOx/MoSe$_{2}$/Au structure. Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au hybrid structures show the electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe$_{2}$/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with switching ratio of $\approx{}$10$^{2}$ and a stable memory window, which are highly required for memory applications.

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J. P. B. Silva, C. Almeida Marques, J. Agostinho Moreira, O. Conde. 2017-05-12. Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybrid structures. https://doi.org/10.1039/c7tc03024j

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