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arXiv · 1706.05797

An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

T. W. Zhang·Z. W. Mao·Z. B. Gu·Y. F. Nie·X. Q. Pan
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Abstract

Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.

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T. W. Zhang, Z. W. Mao, Z. B. Gu, Y. F. Nie, X. Q. Pan. 2017-06-19. An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy. https://doi.org/10.1063/1.4990663

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