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arXiv · 1706.06919

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

M. Yu. Melnikov·V. T. Dolgopolov·A. A. Shashkin·S. -H. Huang·C. W. Liu·S. V. Kravchenko
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Abstract

We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at $I\perp B_\parallel$ into the one measured at $I\parallel B_\parallel$ is suggested and is shown to yield results that agree with the experiment.

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M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko. 2017-06-21. Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. https://doi.org/10.1063/1.4991545

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