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arXiv · 1706.07189

Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

Tobias Völkl·Tobias Rockinger·Martin Drienovsky·Kenji Watanabe·Takashi Taniguchi·Dieter Weiss·Jonathan Eroms
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Abstract

We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was deposited. For graphene/WSe$_2$/SiO$_2$ samples we observe mobilities of $\sim$12 000 cm$^2$/Vs. Magnetic field dependent resistance measurements on these samples show a peak in the conductivity at low magnetic field. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe$_2$(WS$_2$) and hBN show a much higher mobility of up to $\sim$120 000 cm$^2$/Vs. However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic field a resistance peak appears, which we ascribe to a size effect, due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors, due to complete lifting of the spin and valley degeneracy.

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Tobias Völkl, Tobias Rockinger, Martin Drienovsky, Kenji Watanabe, Takashi Taniguchi, Dieter Weiss, Jonathan Eroms. 2017-06-22. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene. https://doi.org/10.1103/physrevb.96.125405

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