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arXiv · 1706.08705

Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system

Heasin Ko·Byung-Seok Choi·Joong-Seon Choe·Kap-Joong Kim·Jong-Hoi Kim·Chun Ju Youn
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Abstract

Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels, which significantly endangers the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is furtherly addressed with experimental results.

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Heasin Ko, Byung-Seok Choi, Joong-Seon Choe, Kap-Joong Kim, Jong-Hoi Kim, Chun Ju Youn. 2017-06-27. Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system. https://doi.org/10.1364/oe.25.020045

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