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arXiv · 1706.09872

Growth and characterization of BaZnGa

Na Hyun Jo·Qisheng Lin·Manh Cuong Nguyen·Udhara S. Kaluarachchi·Wiliam R. Meier·Soham Manni·Savannah S. Downing·Anna E. Böhmer·Tai Kong·Yang Sun·Valentin Taufour·Cai-Zhuang Wang·Kai-Ming Ho·Sergey L. Bud'ko·Paul C. Canfield
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Abstract

We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba-Zn-Ga system. Single crystals of BaZnGa can be grown out of excess Ba-Zn and adopt a tI36 structure type. There are three unique Ba sites and three M\,=\,Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic or magnetic phase transitions between 2\,K and 300\,K.

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Na Hyun Jo, Qisheng Lin, Manh Cuong Nguyen, Udhara S. Kaluarachchi, Wiliam R. Meier, Soham Manni, Savannah S. Downing, Anna E. Böhmer, Tai Kong, Yang Sun, Valentin Taufour, Cai-Zhuang Wang, Kai-Ming Ho, Sergey L. Bud'ko, Paul C. Canfield. 2017-07-11. Growth and characterization of BaZnGa. https://doi.org/10.1080/14786435.2017.1380861

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