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arXiv · 1707.00031

Mobility in excess of $10^{6}$ cm$^2$/Vs in InAs quantum wells grown on lattice mismatched InP substrates

A. T. Hatke·T. Wang·2 C. Thomas·G. Gardner·M. J. Manfra
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Abstract

InAs-based two-dimensional electron systems grown on lattice mismatched InP substrates offer a robust platform for the pursuit of topologically protected quantum computing. We investigated strained composite quantum wells of In$_{0.75}$Ga$_{0.25}$As/InAs/In$_{0.75}$Ga$_{0.25}$As with In$_{0.75}$Al$_{0.25}$As barriers. By optimizing the widths of the In$_{0.75}$Ga$_{0.25}$As layers, the In$_{0.75}$Al$_{0.25}$As barrier, and the InAs quantum well we demonstrate mobility in excess of $1 \times 10^{6}\,$cm$^{2}/$Vs. Mobility vs. density data indicates that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the Rashba parameter and spin-orbit length as important material parameters for investigations involving Majorana zero modes.

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A. T. Hatke, T. Wang, 2 C. Thomas, G. Gardner, M. J. Manfra. 2017-06-30. Mobility in excess of $10^{6}$ cm$^2$/Vs in InAs quantum wells grown on lattice mismatched InP substrates. https://doi.org/10.1063/1.4993784

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