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arXiv · 1707.01582

Traveling Wave Model for Frequency Comb Generation in Single Section Quantum Well Diode Lasers

Mark Dong·Niall M. Mangan·J. Nathan Kutz·Steven T. Cundiff·Herbert G. Winful
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Abstract

We present a traveling wave model for a semiconductor diode laser based on quantum wells. The gain model is carefully derived from first principles and implemented with as few phenomeno- logical constants as possible. The transverse energies of the quantum well confined electrons are discretized to automatically capture the effects of spectral and spatial hole burning, gain asym- metry, and the linewidth enhancement factor. We apply this model to semiconductor optical amplifiers and single-section phase-locked lasers. We are able to reproduce the experimental re- sults. The calculated frequency modulated comb shows potential to be a compact, chip-scale comb source without additional external components.

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Mark Dong, Niall M. Mangan, J. Nathan Kutz, Steven T. Cundiff, Herbert G. Winful. 2017-07-05. Traveling Wave Model for Frequency Comb Generation in Single Section Quantum Well Diode Lasers. https://doi.org/10.1109/jqe.2017.2756641

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