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arXiv · 1708.02338

Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film

Shao-Pin Chiu·Michihiko Yamanouchi·Tatsuro Oyamada·Hiromichi Ohta·Juhn-Jong Lin
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Abstract

Epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ (LSMO) films have been grown on SrTiO$_3$ (001) substrates via pulsed laser deposition. In a 22-nm thick LSMO film with a low residual resistivity of $ρ_0$ = 59 $μΩ$ cm, we found a zero-field dip in the magnetoresistance (MR) below 10 K, manifesting the weak antilocalization (WAL) effect due to strong spin-orbit coupling (SOC). We have analyzed the MR data by including the D'yakonov-Perel' spin-relaxation mechanism in the WAL theory. We explain that the delocalized spin-down electron subband states play a crucial role for facilitating marked SOC in clean LSMO. Moreover, we find that the SOC strength and gate voltage tunability is similar to that in the 2DEG at LaAlO$_3$/SrTiO$_3$ interface, indicating the presence of an internal electric field near the LSMO/SrTiO$_3$ interface. In a control measurement on a 5-nm thick high resistivity ($ρ_0$ = 280 $μΩ$ cm) LSMO film, we observe only a small zero-field peak in MR from weak localization effect, indicating negligible SOC.

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Shao-Pin Chiu, Michihiko Yamanouchi, Tatsuro Oyamada, Hiromichi Ohta, Juhn-Jong Lin. 2017-08-08. Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film. https://doi.org/10.1103/physrevb.96.085143

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