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arXiv · 1708.04852

Complex diffusion mechanism of Zn in InP

Rafal Jakiela
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Abstract

Implantation and diffusion of Zn dopant into bulk InP:S were performed. Zn concentration profiles were investigated by secondary ion mass spectrometry and capacitance-voltage method. We find that thermodynamic conditions of annealing influence diffusion mechanism of Zn atoms. Excess phosphorus vacancies generation causes diffusion of Zn dopant by the complex [V_{P}-Zn_{In}-V_{P}] producing characteristic diffusion profile with the sharp slope. Such electrically inactive Zn configuration cause lower diffusion coefficient than that in the generally known interstitial-substitutional mechanism.

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Rafal Jakiela. 2017-08-16. Complex diffusion mechanism of Zn in InP. https://arxiv.org/abs/1708.04852

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