arXiv · 1708.09834
Microwave-induced resistance oscillations in a back-gated GaAs quantum well
Abstract
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov- de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.
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X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov, Q. Qian, M. J. Manfra. 2017-08-31. Microwave-induced resistance oscillations in a back-gated GaAs quantum well. https://doi.org/10.1103/physrevb.95.235415
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