Silicon-Oxide Interfaces: Structure and Electronic Properties

Y. G. Fedorenko

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arXiv · 1709.01917

Silicon-Oxide Interfaces: Structure and Electronic Properties

Y. G. Fedorenko

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Abstract

The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given.

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Y. G. Fedorenko. 2017-09-06. Silicon-Oxide Interfaces: Structure and Electronic Properties. https://arxiv.org/abs/1709.01917

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