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arXiv · 1709.04592

Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

Ruijing Ge·Xiaohan Wu·Myungsoo Kim·Harry Chou·Sushant Sonde·Li Tao·Jack C. Lee·Deji Akinwande
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Abstract

Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se) transitional metal dichalcogenides (TMDs), and insulating hexagonal boron nitride (h-BN), which alludes to the universality of this phenomenon in non-metallic 2D monolayers, and features forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament and interfacial redox in bulk oxides and electrolytes, inspires new studies on defects, ion transport and energetics at the sharp interfaces between atomically-thin sheets and conducting electrodes. From a contemporary perspective, switching is all the more unexpected in monolayers since leakage current is a fundamental limit in ultra-thin oxides. Emerging device concepts in non-volatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the pervasive NVRS effect and the associated wide materials and engineering co-design opportunity. Experimentally, a 50 GHz radio-frequency (RF) monolayer switch is demonstrated, which opens up a new application for electronic zero-static power RF switching technology.

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Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Harry Chou, Sushant Sonde, Li Tao, Jack C. Lee, Deji Akinwande. 2017-09-14. Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets. https://arxiv.org/abs/1709.04592

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