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arXiv · 1710.03583

Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

O. V. Chefonov·A. V. Ovchinnikov·S. A. Romashevskiy·X. Chai·T. Ozaki·A. B. Savel'ev·M. B. Agranat·V. E. Fortov
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Abstract

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of $8.7\times10^{16}$ cm$^{-3}$) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm$^{-1}$ and a pulse duration of 700 fs. Huge transmittance enhancement of $\sim$90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5--3.1 MV cm$^{-1}$.

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O. V. Chefonov, A. V. Ovchinnikov, S. A. Romashevskiy, X. Chai, T. Ozaki, A. B. Savel'ev, M. B. Agranat, V. E. Fortov. 2017-10-10. Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon. https://doi.org/10.1364/ol.42.004889

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