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arXiv · 1710.08215

Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

Alexander Bulgakov·Anton Evtushenko·Yuri Shukhov·Igor Ozerov·Wladimir Marine
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Abstract

A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR-and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn\_n O\_m and In\_n P\_m particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In\_4 P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favourable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.

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Alexander Bulgakov, Anton Evtushenko, Yuri Shukhov, Igor Ozerov, Wladimir Marine. 2017-10-23. Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors. https://doi.org/10.1063/1.3507174

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