Graphene-Silicon Schottky diodes for photodetection

Antonio Di Bartolomeo; Giuseppe Luongo; Laura Iemmo; Filippo Giubileo

doi:10.1109/tnano.2018.2853798

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arXiv · 1710.10142

Graphene-Silicon Schottky diodes for photodetection

Antonio Di Bartolomeo·Giuseppe Luongo·Laura Iemmo·Filippo Giubileo

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Abstract

We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.

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Antonio Di Bartolomeo, Giuseppe Luongo, Laura Iemmo, Filippo Giubileo. 2017-10-27. Graphene-Silicon Schottky diodes for photodetection. https://doi.org/10.1109/tnano.2018.2853798

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