arXiv · 1711.03812
Studying the occupied and unoccupied electronic structure of LaCoO$_{3}$ by using DFT+embedded DMFT method with the calculated value of $\textit{U}$
Abstract
In this work, we present a systematic study of the occupied and unoccupied electronic states of LaCoO$_{3}$ compound using DFT, DFT+$\textit{U}$ and DFT+embedded DMFT methods. The value of $\textit{U}$ used here is evaluated by using constrained DFT method and found to be $ \backsim $ 6.9 eV. It is found that DFT result has limitations with energy positions of PDOS peaks due to its inability of creating a hard gap although the DOS distribution appears to be fine with experimental attributes. The calculated value of $\textit{U}$ is not an appropriate value for carrying out DFT+$\textit{U}$ calculations as it has created an insulating gap of $ \backsim $ 1.8 eV with limitations in redistribution of DOS which is inconsistent with experimental spectral behaviour for the occupied states mainly. However, this value of $\textit{U}$ is found to be an appropriate one for DFT+embedded DMFT method which creates a gap of $\backsim $ 1.1 eV. The calculated PDOS of Co 3$\textit{d}$, La 5$\textit{d}$, La 4$\textit{f}$ and O 2$\textit{p}$ states are giving a remarkably good explanation for the occupied and unoccupied states of the experimental spectra in the energy range $\backsim $ -9.0 eV to $\backsim $ 12.0 eV.
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Paromita Dutta, Sohan Lal, Sudhir K. Pandey. 2017-11-10. Studying the occupied and unoccupied electronic structure of LaCoO$_{3}$ by using DFT+embedded DMFT method with the calculated value of $\textit{U}$. https://doi.org/10.1140/epjb%2Fe2018-90116-7
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