Generalization of Phonon Confinement Model for Interpretation of Raman Line-Shape from Nano-Silicon

Manushree Tanwar; Priyanka Yogi; Simran Lambora; Suryakant Mishra; Shailendra K. Saxena; Pankaj R Sagdeo; Alexander S. Krylov; Rajesh Kumar

arXiv · 1711.11467

Generalization of Phonon Confinement Model for Interpretation of Raman Line-Shape from Nano-Silicon

Manushree Tanwar·Priyanka Yogi·Simran Lambora·Suryakant Mishra·Shailendra K. Saxena·Pankaj R Sagdeo·Alexander S. Krylov·Rajesh Kumar

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Abstract

A comparative analysis of two Raman line-shape functions has been carried out to validate the true representation of experimentally observed Raman scattering data for semiconducting nanomaterials. A modified form of already existing phonon confinement model incorporates two basic considerations, phonon momentum conservation and shift in zone centre phonon frequency. After incorporation of the above mentioned two factors, a rather symmetric Raman line-shape is generated which is in contrary to the usual asymmetric Raman line-shapes obtained from nanostructured semiconductor. By fitting an experimentally observed Raman scattering data from silicon nanostructures, prepared by metal induced etching, it can be established that the Raman line-shape obtained within the framework of phonon confinement model is a true representative Raman line-shape of sufficiently low dimensions semiconductors.

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Manushree Tanwar, Priyanka Yogi, Simran Lambora, Suryakant Mishra, Shailendra K. Saxena, Pankaj R Sagdeo, Alexander S. Krylov, Rajesh Kumar. 2017-11-30. Generalization of Phonon Confinement Model for Interpretation of Raman Line-Shape from Nano-Silicon. https://arxiv.org/abs/1711.11467

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