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arXiv · 1712.01414

A two-channel model for Spin-relaxation noise

Siddhartha Omar·Bart J. van Wees·Ivan J. Vera-Marun
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Abstract

We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.

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Siddhartha Omar, Bart J. van Wees, Ivan J. Vera-Marun. 2017-12-04. A two-channel model for Spin-relaxation noise. https://doi.org/10.1103/physrevb.96.235439

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