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arXiv · 1712.03011

Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory

Felipe Murphy-Armando·Chang Liu·Yi Zhao·Ray Duffy
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Abstract

Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage current has been lacking. In this work we use experimental data and ab-initio calculations to refine existing models to account for the impact of strain on band-to-band tunnelling and trap-assisted tunnelling in silicon. We observe that the strain may dramatically increase the leakage current, depending on the type of tunnelling involved. For band-to-band and trap-assisted tunnelling, low uniaxial strains of 0.1% (or 180 MPa) can increase the leakage current by 60% and 10% compared to the unstrained case, respectively. Using our models, we predict that compressive strain on the order of 1% (or 2 GPa) can increase the leakage current by 150 times. Conversely, tensile strain may diminish or at most double the leakage current in all observed cases. Though detrimental in conventional inversion-mode MOSFETs, these processes may be used to boost the performance of Tunnel Field Effect Transistors, where on-state current is defined by band-to-band tunnelling.

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Felipe Murphy-Armando, Chang Liu, Yi Zhao, Ray Duffy. 2017-12-08. Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory. https://doi.org/10.1002/pssr.202400221

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