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arXiv · 1801.09579

The influence of a strong infrared radiation field on the conductance properties of doped semiconductors

I. F. Barna·M. A. Pocsai·S. Varró
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Abstract

This work presents an analytic angular differential cross section formula for the electromagnetic radiation field assisted electron scattering by %% was on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described by the well-known Volkov wave function, which has been used describe strong laser field matter interaction for more than half a century, %% I would remove this time reference for clarity which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with $ 10^{11} < I < 10^{13}$ W/cm$^2$ intensity.

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I. F. Barna, M. A. Pocsai, S. Varró. 2018-11-05. The influence of a strong infrared radiation field on the conductance properties of doped semiconductors. https://doi.org/10.1051/epjap%2F2018180156

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