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arXiv · 1804.01219

Stress modulated optical spin-injection in bulk semiconductors

Jose Luis Cabellos·Cuauhtemoc Salazar·Bernardo S. Mendoza
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Abstract

A full band-structure ab initio calculation of the degree of spin polarization (DSP) in stressed bulk Si and bulk GaAs is reported. For Si, we found that compressive stress causes the DSP signal peak to decrease slightly in magnitude and to shift to higher energies.

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Jose Luis Cabellos, Cuauhtemoc Salazar, Bernardo S. Mendoza. 2018-04-04. Stress modulated optical spin-injection in bulk semiconductors. https://doi.org/10.1103/physrevb.80.245204

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