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arXiv · 1804.03876

Effective g factor of 2D holes in strained Ge quantum wells

I. L. Drichko·A. A. Dmitriev·V. A. Malysh·I. Yu. Smirnov·H. von Känel·M. Kummer·D. Chrastina·G. Isella
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Abstract

The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the $\mathrm{g}_{\perp}$-factor of each sample was determined. The $\mathrm{g}_{\perp}$-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to non-parabolicity of the valence band.

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I. L. Drichko, A. A. Dmitriev, V. A. Malysh, I. Yu. Smirnov, H. von Känel, M. Kummer, D. Chrastina, G. Isella. 2018-04-11. Effective g factor of 2D holes in strained Ge quantum wells. https://doi.org/10.1063/1.5025413

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