SearcharxivSearch

arXiv · 1804.04196

NMR and the antiferromagnetic crystal phase regions in rapidly quenched ribbons and in alloys of the type $Cu-Mn-Al$

Abstract

It was shown that anomalous resistivity behavior of the $Cu-Mn-Al$ ribbons is explained by the s-d interaction between conduction electrons and the clustered Mn atoms. While nuclear magnetic resonance measurements show the antiferromagnetic and ferromagnetic clusters of Mn atom coexisting without long-range order, it is an interesting problem to study magnetic resonance properties also for the antiferromagnetic crystal phase regions (which have long-range order for larger regions) and which may also occur in these ribbons. The Heusler Type $Cu-Mn-Al$ Alloy has a composition half way between $Cu_{2}MnAl$ and $Cu_{3}Al$. Electron microscopy of the premartensitic $\beta Cu-Zn-Al$ alloy has shown that the $\beta Cu-Zn-Al$ alloy quenched from high temperature has the electron diffraction patterns of this alloy well explained by the model with the existence of small particles with an orthorhombic structure. It was noted that an important aspect of improvement in the material properties is to create a nanostructured state in matrix, which has significant advantages in magnetic and mechanical characteristics in contrast to the bulk materials in crystalline or amorphous state. It is an interesting problem to study magnetic resonance properties not only for the Mn atoms and clusters without long-range order but also for the antiferromagnetic crystal phase regions (which have long-range order for larger regions) which may also occur in ribbons. This is the aim of our paper.

Explore related subjects

Keep this discovery

BibTeXRIS

Matej Hudak, Jana Tothova, Ondrej Hudak. 2018-04-11. NMR and the antiferromagnetic crystal phase regions in rapidly quenched ribbons and in alloys of the type $Cu-Mn-Al$. https://doi.org/10.13140/rg.2.2.12665.16487

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci