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arXiv · 1805.09611

Nonlinear Transfer of Intense Few Cycle Terahertz Pulse Through Opaque n-doped Si

O. V. Chefonov·A. V. Ovchinnikov·M. B. Agranat·V. E. Fortov·E. S. Efimenko·A. N. Stepanov·A. B. Save'lev
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Abstract

Intense few cycle terahertz pulses exhibit complex non-linear behavior under interaction with heavily n-doped Si. Fast increase in the transmission of a 700 fs pulse (central frequency 1.5 THz) through the Si sample (low field transmission of 0:02 %) saturates at 8 % for the external field of 5 MV/cm and then drops twofold at 20 MV/cm. An electro-optical sampling measurements revealed formation of a single cycle terahertz pulse at this field due to formation of a thin ionized layer by the first intense oscillation of the terahertz field.

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O. V. Chefonov, A. V. Ovchinnikov, M. B. Agranat, V. E. Fortov, E. S. Efimenko, A. N. Stepanov, A. B. Save'lev. 2018-05-24. Nonlinear Transfer of Intense Few Cycle Terahertz Pulse Through Opaque n-doped Si. https://doi.org/10.1103/physrevb.98.165206

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