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arXiv · 1806.09934

Electrical properties of in-plane-implanted graphite nanoribbons

B. C. Camargo·R. F. de Jesus·B. V. Semenenko·C. E. Precker
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Abstract

We studied the effect of low energy (30 keV) ionic implantation of Ga+ in the direction parallel to the graphene planes (perpendicular to c-axis) in oriented graphite ribbons with widths around 500 nm. Our experiments have reproducibly shown a reduction of electrical resistance upon implan- tation consistent with the occurrence of ionic channeling in our devices. Our results allow for new approaches in the modulation of the charge carrier concentration in mesoscopic graphite.

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B. C. Camargo, R. F. de Jesus, B. V. Semenenko, C. E. Precker. 2018-06-26. Electrical properties of in-plane-implanted graphite nanoribbons. https://doi.org/10.1063/1.4995223

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