Electric Field Driven Memristive Behavior at the Schottky Interface of Nb doped SrTiO3

A. S. Goossens; A. Das; T. Banerjee

doi:10.1063/1.5037965

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arXiv · 1807.06274

Electric Field Driven Memristive Behavior at the Schottky Interface of Nb doped SrTiO3

A. S. Goossens·A. Das·T. Banerjee

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Abstract

Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior.

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A. S. Goossens, A. Das, T. Banerjee. 2018-07-17. Electric Field Driven Memristive Behavior at the Schottky Interface of Nb doped SrTiO3. https://doi.org/10.1063/1.5037965

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