arXiv · 1808.03534
Electrical and optical properties of MoS$_{2}$,MoO$_{x=2,3}$(MoSO)/RGO heterostructure
Abstract
We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the heterostructure made by P or n-type MoSO, exhibit Schottkey behavior in the interface similar to the MoS$_{2}$/Gr ones. Theoretical calculations show significant effects of lateral layer size as well as layer number in the electronic properties. In monolayer MoS$_{2}$/Gr by increasing the lateral size the energy gap disappears and the Fermi level shifts towards valence band. In the case of bilayer MoS$_{2}$ on bilayer Gr structure, the Fermi level shift is again towards valence band but, the gap is slightly higher than the monolayer structure. We found that the experimentally obtained results for n-type MoSO/RGO results are qualitatively in agreement with theoretical calculations of the MoS$_{2}$/Gr heterostructure. These results are beneficial to understand and design the high quality and low cost MoSO/RGO based electronic, optoelectronic and energy storage devices or cocatalysts.
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S. Erfanifam, L. Jamilpanah, P. Sangpour, M. Hamdi, F. Haddadi, M. Erfanifam, G. Chanda, T. Herrmannsdörfer, V. Sazgari, A. Sadeghi, M. Mohseni. 2018-08-10. Electrical and optical properties of MoS$_{2}$,MoO$_{x=2,3}$(MoSO)/RGO heterostructure. https://arxiv.org/abs/1808.03534
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