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arXiv · 1808.08727

Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime

S. V. Gudina·Yu. G. Arapov·V. N. Neverov·A. P. Savelyev·S. M. Podgonykh·N. G. Shelushinina·M. V. Yakunin
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Abstract

We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental data for the longitudinal conductivity at zero magnetic field to the theory of interaction-induced corrections to th transport coefficients. In the temperature range from 10 K up to (45-60) K, wich covers the ballistic interaction regimes for our samples, a rather good agreement between the theory and our experimental results has been found.

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S. V. Gudina, Yu. G. Arapov, V. N. Neverov, A. P. Savelyev, S. M. Podgonykh, N. G. Shelushinina, M. V. Yakunin. 2018-08-27. Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime. https://doi.org/10.1016/j.physe.2019.04.009

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