Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 1808.10362

Complete characterization of sink-strengths for mutually 1D-mobile defect clusters: Extension to diffusion anisotropy analog cases

Gilles Adjanor
View original source ↗Read source document ↗Export metadata ↓

Abstract

Simulating more than seconds of microstructure evolution in systems involving almost athermally or very fast diffusing species such as self-interstitial atom (SIA) clusters currently relies on mean-field or coarse-graining techniques. Rate-equation cluster dynamics (RECD) is the most popular of those when dealing with irradiated microstructure or second phase precipitation. The important input parameters of RECD are the absorption rates, also called cluster sink-strengths (CSS). These quantities crucially depend on the way clusters interact and diffuse and notably on the dimensionality of the involved random diffusion processes. As expected theoretically and experimentally confirmed, SIA clusters migrate in a one-dimensional fashion (possibly with random orientation changes). This complicates the calculation of the related CSS. When involving a 1D-mobile specie and an immobile reaction partner (a "1D-0" reaction) the expressions are quite well known as well as the extension including random rotations (a "1DR-0" reaction). Expressions of CSS for absorptions between identical 1D-mobile species were proposed in the literature, but the general case of 1D-1D absorptions between different cluster classes is unknown. Here we propose such general expressions which turn out to depend on capture radii of interacting clusters populations, concentrations and notably on the ratio of their respective diffusion coefficients through a power-law. The same power-law formulation is found for 1D-3D absorptions but with different exponents, which thus appear as signatures of the dimensionality of the involved random motions. These limiting cases of CSS being established, they are finally implemented in an RECD calculation. The comparison with time consuming kinetic Monte-Carlo simulations completely validates their expression and without any need of multi-sink terms.

Explore related subjects

cond-mat.mtrl-sciphysics.comp-ph

Keep this discovery

BibTeXRIS

Gilles Adjanor. 2018-08-30. Complete characterization of sink-strengths for mutually 1D-mobile defect clusters: Extension to diffusion anisotropy analog cases. https://doi.org/10.1016/j.jnucmat.2022.153970

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗