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arXiv · 1809.09967

High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

S. Takahashi·T. Tajiri·K. Watanabe·Y. Ota·S. Iwamoto·Y. Arakawa
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Abstract

We experimentally demonstrated high quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4-times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, we successfully observed a lasing oscillation from this cavity mode.

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S. Takahashi, T. Tajiri, K. Watanabe, Y. Ota, S. Iwamoto, Y. Arakawa. 2018-09-18. High-Q nanocavities in semiconductor-based three-dimensional photonic crystals. https://doi.org/10.1049/el.2017.4542

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