Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Guangrui; Xia

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arXiv · 1809.09985

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Guangrui·Xia

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Abstract

Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors, and Ge-on-Si based photonic devices.

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Guangrui, Xia. 2018-09-26. Experiments and Modeling of Mass Transport Phenomena in SiGe Devices. https://arxiv.org/abs/1809.09985

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