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arXiv · 1809.10878

Hole/Electron transport layers in tin-doped SBLN nano materials for hybrid solar cells

Anurag Pritam·Vaibhav Shrivastava
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Abstract

In this work, layered perovskite SBN was investigated in a new doped form for hole as well as electron transport layer (HTL/ETL) in perovskite solar cells. This work was targeted to conclude the effect of tin doping in lanthanum-bismuth layer SBN on optical energy band gap besides dominant electron-hole transportation to assist in perovskite solar cell applications. Thoroughly hard ball-milled compositions Sr1-xSnxBi1.95La0.05Nb2O9 (x=0.0, 0.01, 0.03, 0.05, 0.1 and 0.2) were prepared by special microwave synthesis to obtain fine (~10-60nm) mesoporous particle network of atomic level substitutions. Microwave synthesis was crucial in modifying dielectric, semiconducting and optical characteristics of prepared SBN materials. The band gap reduced in continuous manner and carrier mobility was increased by 112% for maximum tin doping. Nano particle formation assisted in raising carrier mobility by bridging bigger grains through nano particles. The effect of macro-sized grains and nano-sized grain boundaries on carrier transport were further investigated in detail using impedance spectroscopy.

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Anurag Pritam, Vaibhav Shrivastava. 2018-09-28. Hole/Electron transport layers in tin-doped SBLN nano materials for hybrid solar cells. https://doi.org/10.1007/s10854-019-01447-1

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