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arXiv · 1810.01657

Noncollinearity-modulated electronic properties of the monolayer CrI$_3$

Lingling Ren·Qian Liu·Pengxiang Xu·Zhicheng Zhong·Li Yang·Zhe Yuan·Ke Xia
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Abstract

Introducing noncollinear magnetization into a monolayer CrI$_3$ is proposed to be an effective approach to modulate the local electronic properties of the two-dimensional (2D) magnetic material. Using first-principles calculation, we illustrate that both the conduction and valence bands in the monolayer CrI$_3$ are lowered down by spin spiral states. The distinct electronic structure of the monolayer noncollinear CrI$_3$ can be applied in nanoscale functional devices. As a proof of concept, we show that a magnetic domain wall can form a one-dimensional conducting channel in the 2D semiconductor via proper gating. Other possible applications such as electron-hole separation and identical quantum dots are also discussed.

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Lingling Ren, Qian Liu, Pengxiang Xu, Zhicheng Zhong, Li Yang, Zhe Yuan, Ke Xia. 2019-04-16. Noncollinearity-modulated electronic properties of the monolayer CrI$_3$. https://doi.org/10.1103/physrevapplied.11.054042

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