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arXiv · 1810.08888

Coherent control of defect spins in silicon carbide above 550 K

Fei-Fei Yan·Jun-Feng Wang·Qiang Li·Ze-Di Cheng·Jin-Ming Cui·Wen-Zheng Liu·Jin-Shi Xu·Chuan-Feng Li·Guang-Can Guo
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Abstract

Great efforts have been made to the investigation of defects in silicon carbide for their attractive optical and spin properties. However, most of the researches are implemented at low and room temperature. Little is known about the spin coherent property at high temperature. Here, we experimentally demonstrate coherent control of divacancy defect spins in silicon carbide above 550 K. The spin properties of defects ranging from room temperature to 600 K are investigated, in which the zero-field-splitting is found to have a polynomial temperature dependence and the spin coherence time decreases as the temperature increases. Moreover, as an example of application, we demonstrate a thermal sensing using the Ramsey method at about 450 K. Our experimental results would be useful for the investigation of high temperature properties of defect spins and silicon carbide-based broad-temperature range quantum sensing.

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Fei-Fei Yan, Jun-Feng Wang, Qiang Li, Ze-Di Cheng, Jin-Ming Cui, Wen-Zheng Liu, Jin-Shi Xu, Chuan-Feng Li, Guang-Can Guo. 2018-10-21. Coherent control of defect spins in silicon carbide above 550 K. https://doi.org/10.1103/physrevapplied.10.044042

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