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arXiv · 1810.10840

Origin of the giant spin Hall effect in BiSb topological insulator

Takanori Shirokura·Kenichiro Yao·Yugo Ueda·Pham Nam Hai
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Abstract

The giant spin Hall effect (SHE) at room temperature is one of the most attractive feature of topological insulators (TIs) for applications to nano-scale spin devices. Its origin, however, remains a controversial problem. Here, we identify the origin of the giant SHE in BiSb thin films by measuring the spin Hall angle ${\theta}_{SH}$ under controllable contribution of surface and bulk conduction. We found that ${\theta}_{SH}$ of a Bi$_{0.6}$Sb$_{0.4}$ TI thin film takes colossal values (450 - 530 at 8 K, and 38 at 300 K), and is almost governed by contribution from the topological surface states. Meanwhile, ${\theta}_{SH}$ in a Bi$_{0.2}$Sb$_{0.8}$ semi-metallic thin film without topological surface states drastically decreases. Our results provide a quantitative tool for analysing the origin of the giant SHE in TI thin films, as well as a strategy for designing spin current source utilizing the surface states of TI in high-performance nano-scale spin devices.

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Takanori Shirokura, Kenichiro Yao, Yugo Ueda, Pham Nam Hai. 2018-10-25. Origin of the giant spin Hall effect in BiSb topological insulator. https://arxiv.org/abs/1810.10840

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