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arXiv · 1810.13199

Insights into the Unusual Semiconducting Behavior in Low-Dimensional Boron

Shao-Gang Xu·Xiao-Tian Li·Yu-Jun Zhao·Wang-Ping Xu·Ji-Hai Liao·Xiu-Wen Zhang·Hu Xu·Xiao-Bao Yang
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Abstract

Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of boron nanostructures were found to be metallic, despite of their typical semiconducting bulk structure. Herein, we propose a general recipe to realize low-dimensional semiconducting boron. This unusual semiconducting behavior is attributed to charge transfer and electron localization, induced by the symmetry breaking that divides boron atoms into cations and anions. In addition, it is feasible to accomplish band gap engineering by rationally designing various structures. Importantly, the low-dimensional semiconducting boron are predicted to be an excellent solar-cell material with the power conversion efficiency of higher than 20%, paving the way for their promising optoelectronic applications.

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Shao-Gang Xu, Xiao-Tian Li, Yu-Jun Zhao, Wang-Ping Xu, Ji-Hai Liao, Xiu-Wen Zhang, Hu Xu, Xiao-Bao Yang. 2018-10-31. Insights into the Unusual Semiconducting Behavior in Low-Dimensional Boron. https://arxiv.org/abs/1810.13199

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