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arXiv · 1812.00130

Optimization of quantum well number of AlGaN/AlGaN deep-ultraviolet light-emitting diodes

Galih Ramadana Suwito·Ya-Hsuan Shih·Sung-Wen Huang Chen·Zi-Hui Zhang·Hao-Chung Kuo
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Abstract

In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best performance at low injection current. However, at higher injection current, 2-QWs structure give the largest power output due to its higher total radiative recombination rate and internal quantum efficiency (IQE) compared to other structures. The 2-QWs structure also has less serious efficiency droop at high current than 1-QW, which makes it an optimum structure for high-power LEDs.

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Galih Ramadana Suwito, Ya-Hsuan Shih, Sung-Wen Huang Chen, Zi-Hui Zhang, Hao-Chung Kuo. 2018-12-01. Optimization of quantum well number of AlGaN/AlGaN deep-ultraviolet light-emitting diodes. https://arxiv.org/abs/1812.00130

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