arXiv · 1812.01829
Multilayer ion trap technology for scalable quantum computing and quantum simulation
Abstract
We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled $\,^{9}$Be$^{+}$ ion held at a distance of 35$\,\mu$m above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.
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Amado Bautista-Salvador, Giorgio Zarantonello, Henning Hahn, Alan Preciado-Grijalva, Jonathan Morgner, Martina Wahnschaffe, Christian Ospelkaus. 2018-12-05. Multilayer ion trap technology for scalable quantum computing and quantum simulation. https://doi.org/10.1088/1367-2630%2Fab0e46
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