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arXiv · 1812.10210

Spin-valve Effect in Nanoscale Si-based Devices

Duong Dinh Hiep·Masaaki Tanaka·Pham Nam Hai
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Abstract

The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper, we review the latest results on the spin transport in nanoscale Si-based spin-valve devices, which is important to realize the nanoscale spin-MOSFET. Our results demonstrate the importance of ballistic transport in obtaining high spin-dependent output voltage in nanoscale Si spin-valve devices.

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Duong Dinh Hiep, Masaaki Tanaka, Pham Nam Hai. 2018-12-26. Spin-valve Effect in Nanoscale Si-based Devices. https://doi.org/10.22661/aappsbl.2018.28.3.07

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