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arXiv · 1812.10432

Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC

P. G. Brereton·D. Puent·J. Vanhoy·E. R. Glaser·S. G. Carter
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Abstract

Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of single spin qubit with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies generated via proton irradiation as a function of implantation depth. We show clear evidence of dephasing interactions between the silicon vacancies and the spin environment of the bulk crystal. This result will inform further routes toward fabrication of scalable silicon carbide devices and studies of spin interactions of in high-density ensembles of defects.

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P. G. Brereton, D. Puent, J. Vanhoy, E. R. Glaser, S. G. Carter. 2018-12-26. Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC. https://doi.org/10.1016/j.ssc.2020.114014

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