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arXiv · 1901.01996

Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

Nguyen Thanh Tu·Pham Nam Hai·Le Duc Anh·Masaaki Tanaka
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Abstract

We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 - 35%) thin films grown by low-temperature molecular beam epitaxy. The (In1-x,Fex)Sb thin films with x = 20 - 35% maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The Curie temperature (TC) of (In1-x,Fex)Sb reaches 390 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force (HC = 160 Oe) and large remanent magnetization (Mr/MS = 71%) have been observed for a (In1-x,Fex)Sb thin film with x = 35%. Our results indicate that the n-type ferromagnetic semiconductor (In1-x,Fex)Sb is very promising for spintronics devices operating at room temperature.

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Nguyen Thanh Tu, Pham Nam Hai, Le Duc Anh, Masaaki Tanaka. 2019-01-07. Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy. https://arxiv.org/abs/1901.01996

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