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arXiv · 1901.07161

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Miao Wang·Chengyu Wang·Chenchen Wu·Qiao Li·Chen Pan·Cong Wang·Shi-Jun Liang·Feng Miao
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Abstract

Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics.

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Miao Wang, Chengyu Wang, Chenchen Wu, Qiao Li, Chen Pan, Cong Wang, Shi-Jun Liang, Feng Miao. 2019-01-22. S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides. https://doi.org/10.1002/aelm.201800853

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