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arXiv · 1901.09645

Coulomb Blockade from the Shell of an InP-InAs Core-Shell Nanowire with a Triangular Cross Section

D. J. O. Göransson·M. Heurlin·B. Dalelkhan·S. Abay·M. E. Messing·V. F. Maisi·M. T. Borgström·H. Q. Xu
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Abstract

We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shell are grown preferentially on specific {1$\bar{1}$00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred on to a Si/SiO$_2$ substrate and then contacted with several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.

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D. J. O. Göransson, M. Heurlin, B. Dalelkhan, S. Abay, M. E. Messing, V. F. Maisi, M. T. Borgström, H. Q. Xu. 2019-01-28. Coulomb Blockade from the Shell of an InP-InAs Core-Shell Nanowire with a Triangular Cross Section. https://doi.org/10.1063/1.5084222

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