SearcharxivSearch

arXiv · 1902.01938

Ultrafast Electron Dynamics in Thiolate-Protected Plasmonic Gold Clusters: Size and Ligand Effect

Abstract

The influence of passivating ligand on electron-phonon relaxation dynamics of the smallest sized gold clusters was studied using ultrafast transient absorption spectroscopy and theoretical modeling. The electron dynamics in Au279, Au329, and Au329 passivated with TBBT, SC2Ph and SC6, respectively, were investigated. Ultrafast transient absorption measurements were also carried out on Au~1400 (SC6) and Au~2000 (SC6) to understand the influence of the size on electron-phonon relaxation with the same passivating ligand. The study has revealed interesting aspects on the role of ligand on electron-phonon relaxation dynamics wherein the aromatic passivating ligands, SC2Ph and TBBT, have shown smaller power dependence and higher plasmon bleach indicating dampened plasmon resonance while the cluster with aliphatic passivating ligand has behaved similarly to regular plasmonic gold nanoparticles. To model the effect of the ligand on the plasmonic properties of the investigated samples , free electron density correction factor of each one was calculated using three-layered Mie theory, and the results show that SC6 inter-acts least with core-gold while TBBT and SC2Ph have a greater effect on the surface electronic conductivity that is attributed to pi-interaction of the ligand with gold. The results also shed light on unusual electron-phonon relaxation and smaller slope observed for Au329 (SC2Ph) that is ascribed to surface gold-pi interaction creating a hybrid state. In contrast, extended pi-interaction is probably the reason for plasmonic nature observed in Au279 (TBBT) even though its size is smaller when compared to Au329. In addition, the results also have shown that the electron-phonon coupling has increased with an increase in the size of the cluster and theoretical modeling has shown higher electron conductivity for larger plasmonic gold clusters.

Explore related subjects

Keep this discovery

BibTeXRIS

Masoud Shabaninezhad, Abubkr Abuhagr, Naga Arjun Sakthivel, Chanaka Kumara, Amala Dass, Kyuju Kwak, Kyunglim Pyo, Dongil Lee, Guda Ramakrishna. 2019-02-05. Ultrafast Electron Dynamics in Thiolate-Protected Plasmonic Gold Clusters: Size and Ligand Effect. https://doi.org/10.1021/acs.jpcc.9b01739

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall