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arXiv · 1902.08908

Role of oxygen interstitials in Zn1-xGaxO for faster response to UV light

Prashant Kumar Mishra·Tulika Srivastava·Saniya Ayaz·Ramraj Meena·Sajal Biring·Somaditya Sen
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Abstract

ZnO doped with Gallium (Ga3+) demonstrates better crystalline nature and conductivity increases. Latent defect states are suppressed. However, due to the larger charge of Ga3+ oxygen interstitials are generated which control the sensing speed. The conductance increases as a consequence of reduced defect states, especially the oxygen vacancies. The photocurrent increases with Galium incorporation, but a more intense increase in the current reduces the sensitivity.

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Prashant Kumar Mishra, Tulika Srivastava, Saniya Ayaz, Ramraj Meena, Sajal Biring, Somaditya Sen. 2019-02-24. Role of oxygen interstitials in Zn1-xGaxO for faster response to UV light. https://arxiv.org/abs/1902.08908

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