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arXiv · 1902.09152

Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors

A. N. Rudenko·A. V. Lugovskoi·A. Mauri·Guodong Yu·Shengjun Yuan·M. I. Katsnelson
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Abstract

Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is usually excluded from the consideration. Here we present a theory for the electron-phonon scattering, in which the anharmonic coupling between acoustic phonons is systematically taken into account. Our theory is applied to the typical group V two-dimensional semiconductors: hexagonal phosphorus, arsenic, and antimony. We find that the role of the flexural modes is essentially suppressed by their coupling with in-plane modes. At dopings lower than 10$^{12}$ cm$^{-2}$ the mobility reduction does not exceed 30\%, being almost independent of the concentration. Our findings suggest that compared to in-plane phonons, flexural phonons are considerably less important in the electronic transport of two-dimensional semiconductors, even at low carrier concentrations.

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A. N. Rudenko, A. V. Lugovskoi, A. Mauri, Guodong Yu, Shengjun Yuan, M. I. Katsnelson. 2019-02-25. Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors. https://doi.org/10.1103/physrevb.100.075417

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