Optically detected spin-mechanical resonance in silicon carbide membranes

A. V. Poshakinskiy; G. V. Astakhov

doi:10.1103/physrevb.100.094104

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arXiv · 1903.00876

Optically detected spin-mechanical resonance in silicon carbide membranes

A. V. Poshakinskiy·G. V. Astakhov

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Abstract

Hybrid spin-mechanical systems are a promising platform for future quantum technologies. Usually they require application of additional microwave fields to project integer spin to a readable state. We develop a theory of optically detected spin-mechanical resonance associated with half-integer spin defects in silicon carbide (SiC) membranes. It occurs when a spin resonance frequency matches a resonance frequency of a mechanical mode, resulting in a shortening of the spin relaxation time through resonantly enhanced spin-phonon coupling. The effect can be detected as an abrupt reduction of the photoluminescence intensity under optical pumping without application of microwave fields. We propose all-optical protocols based on such spin-mechanical resonance to detect external magnetic fields and mass with ultra-high sensitivity. We also discuss room-temperature nonlinear effects under strong optical pumping, including spin-mediated cooling and heating of mechanical modes. Our approach suggests a new concept for quantum sensing using spin-optomechanics.

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A. V. Poshakinskiy, G. V. Astakhov. 2019-03-03. Optically detected spin-mechanical resonance in silicon carbide membranes. https://doi.org/10.1103/physrevb.100.094104

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